Contents:-- Introduction--Chapter 1--Basic physics of semiconductors--Chapter 2--Carrier transport phenomena--Chapter 3--p-n Junction--chapter 4-- Bipolar transistors--Chapter 5--Field effect transistors--Chapter 6--Advanced MOSFET devices--Chapter 7--MSFET and related devices--Chapter 8--Microwave diodes,power,quantum-effect and hot-electron devices--Chapter 9Optical devices:Light-emitting diodes and lasers--Chapter 10--Optical devices: Photodetectors and solar cells--Chapter 11--Semiconductor process technology--Chapter 12Integrated devices--Appendix A - Glossary--Appendix B - List of symbols --Appendix C - International system of us (SI Units) -- Appendix D - Unit Prefixes -- Appendix E -Greek Alphabet -- Appendix F -Physical constants -- Appendix G - Properties of important element and binary compound semiconductors at 300k --Appendix H - Properties of Si and GaAs at 300 K ---Appendix I -Derivation of states in a semiconductor --Appendix J -Derivation of recombination rate for indirect recombination-- Appendix K -Calculation of the transmission coefficient for a symmetric resonant-tunneling diode-- Appendix L -Basic kinetic theory of gases ----Appendix M -Answers to selected problems ---Index.

Semiconductor physics and devices offers unified coverage of semiconductors and their conduction processes and physical principles of modern semiconductor devices. The book also focuses on advanced fabrication technology of semiconductor devices, with an emphasis on integrated circuits. This Indian adaptation of semiconductor devices,Physics and technology,third edition,has been developed based on the detailed feedback obtained from long-standing users of the book about how the book should be revised.Building on the strength of the previous editions,the focus of this adaptation has been on strengthening the coverage and updating the solved examples and problems.The following are the salient features of this edition: Reviseed contents *Chaper 1 on Basic physics of semiconductors includes sections on quantum physics of semiconductors,bandgaps in semiconductors and density of states. *Chapter 4 on Bipolar transistors includes a section on AC equivalent circuits. *Chapter 5 on field effect transistors includes sections on JFET fundamentals and JFET device characteristics. *Chapter 6 on advanced MOSFET devices includes sections on strained silicon MOSFET and Gate-All-Around (GAA) devices. *Chapter 8 on microwave diodes;power,quantum-effect,and hot-electron devices includes sections on gunn diode, zener diode,varactor diode,gallium arsenide devices and power BJT. *Chapter 11 on semiconductor process technology provides consolidated coverage of the important fabrication technologies used for manufacturing semiconductor devices. *Appendix A provides glossary ofthe important topics covered in each chapter. Revised Pedagogy *About half of the solved examples and end-of -chapter problems are new or revised. *Multiple choice questions,including questions asked in competitive examination such as ISRO,IES and GATE have been included at the end of each chapter which help the readers to test their understanding of the concepts covered.