000 | 03471nam a22002537a 4500 | ||
---|---|---|---|
005 | 20221227124058.0 | ||
008 | 221227b |||||||| |||| 00| 0 eng d | ||
020 | _a9789401776820 | ||
082 |
_a621.3 _bFEL |
||
100 | _aFelser, Claudia; | ||
245 |
_aSpintronics : _bfrom materials to devices _cClaudia Felser, Gerhard H. Fecher |
||
260 |
_aDordrecht, _bSpringer, _c©2013. |
||
300 |
_a369 pages : _bill.; _c24 cm. |
||
505 |
_tHeusler compounds at a glance.- _tNew Heusler compounds and their properties.- _tCrystal structure of Heusler compounds.- _tSubstitution effects in double Perovskites: How the crystal structure influences the electronic properties.- _tHalf-metallic ferromagnets.- _tCorrelation and chemical disorder in Heusler compounds: a spectroscopical study.- _tTheory of the half-metallic Heusler compounds.- _tElectronic structure of complex oxides.- _tLocal structure of highly spin polarized Heusler compounds revealed by nuclear magnetic resonance spectroscopy.- _tNew materials with high spin polarization investigated by X-ray magnetic circular dichroism.- _tHard X-ray photoelectron spectroscopy of new materials for spintronics.- _tCharacterization of the surface electronic properties of Co2Cr1 xFexAl.- _tMagneto-optical investigations and ion beam-induced modification of Heusler compounds.- _tCo2Fe(Al1 xSix) Heusler alloys and their applications to spintronics.- _tTransport properties of Co2(Mn,Fe)Si thin films.- _tPreparation and investigation of interfaces of Co2Cr1 xFexAl thin films.- _tTunnel magnetoresistance effect in tunnel junctions with Co2MnSi Heusler alloy electrode and MgO barrier. |
||
520 | _aSpintronics is an emerging technology exploiting the spin degree of freedom and has proved to be very promising for new types of fast electronic devices. Amongst the anticipated advantages of spintronics technologies, researchers have identified the non-volatile storage of data with high density and low energy consumption as particularly relevant. This monograph examines the concept of half-metallic compounds perspectives to obtain novel solutions and discusses several oxides such as perovskites, double perovskites and CrO2 as well as Heusler compounds. Such materials can be designed and made with high spin polarization and, especially in the case of Heusler compounds, many material-related problems present in current-day 3d metal systems, can be overcome. Spintronics: From Materials to Devices provides an insight into the current research on Heusler compounds and offers a general understanding of structure-property relationships, including the influence of disorder and correlations on the electronic structure and interfaces. Spintronics devices such as magnetic tunnel junctions (MTJs) and giant magnetoresistance (GMR) devices, with current perpendicular to the plane, in which Co2 based Heusler compounds are used as new electrode materials, are also introduced. From materials design by theoretical methods and the preparation and properties of the materials to the production of thin films and devices, this monograph represents a valuable guide to both novices and experts in the fields of Chemistry, Physics, and Materials Science | ||
650 | _aMagnetic materials | ||
650 | _aSpintronics | ||
650 | _aOptical materials | ||
650 | _aSurfaces (Physics) | ||
650 | _aPhysical organic chemistry | ||
650 | _aMaterials science | ||
700 | _aFecher, Gerhard H.[ed.] | ||
942 |
_2ddc _cBK |
||
999 |
_c1897 _d1897 |